发明名称 |
METHODS OF FORMING DISLOCATION ENHANCED STRAIN IN NMOS STRUCTURES |
摘要 |
Methods of forming a strained channel device utilizing dislocations disposed in source/drain structures are described. Those methods and structures may include forming a thin silicon germanium material in a source/drain opening of a device comprising silicon, wherein multiple dislocations are formed in the silicon germanium material. A source/drain material may be formed on the thin silicon germanium material, wherein the dislocations induce a tensile strain in a channel region of the device. |
申请公布号 |
EP3050090(A4) |
申请公布日期 |
2017.04.05 |
申请号 |
EP20130894579 |
申请日期 |
2013.09.26 |
申请人 |
Intel Corporation |
发明人 |
JACKSON, Michael;MURTHY, Anand;GLASS, Glenn;MORARKA, Saurabh;MOHAPATRA, Chandra |
分类号 |
H01L21/336;H01L29/78 |
主分类号 |
H01L21/336 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
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