Coherent spin field effect transistor

摘要

A coherent spin field effect transistor is provided by depositing a ferromagnetic base like cobalt on a substrate. A magnetic oxide layer is formed on the cobalt by annealing at temperatures on the order of 1000° K to provide a few monolayer thick layer. Where the gate is cobalt, the resulting magnetic oxide is Co3O4 (111). Other magnetic materials and oxides may be employed. A few ML field of graphene is deposited on the cobalt (III) oxide by molecular beam epitaxy, and a source and drain are deposited of base material. The resulting device is scalable, provides high on/off rates, is stable and operable at room temperature and easily fabricated with existing technology.

主权项

1. A method of forming a coherent spin field effect transistor (spin-FET), comprising a cobalt base layer or gate, a cobalt oxide layer overlaying said base layer, a layer of graphene deposited over said magnetic oxide layer, a separated source and drain both in electrical contact with said graphene layer, wherein polarization of ions in layers within said magnetic oxide layer overlaying said base layer and adjacent said graphene layer is ferromagnetic within the layers comprising:
(A) forming said gate layer by deposition of said cobalt, followed by annealing to segregate surface oxygen to form a few monolayer thick cobalt oxide layer; and (B) depositing said graphene layer on said cobalt oxide layer by one or more of molecular beam epitaxy (MBE), chemical vapor deposition (CVD) and powder vapor deposition (PVD) and thereafter forming said source and drain on said graphene.