Substrate having annealed aluminum nitride layer formed thereon and method for manufacturing the same

摘要

A substrate having an annealed AlN layer includes a substrate made of a material selected from among a group including sapphire, silicon carbide (SiC), and aluminum nitride (AlN), and an aluminum nitride (AlN) layer formed on the substrate and having a thickness of 100 nm or greater. The aluminum nitride layer is annealed at a prescribed annealing temperature and in a nitrogen/carbon monoxide (N2/CO) mixed gas atmosphere, and the nitrogen/carbon monoxide (N2/CO) mixed gas has a mixture ratio of N2 gas/CO gas in a range of 0.95/0.05 to 0.4/0.6.

主权项

1. A multi-layered substrate comprising:
a base substrate made of a material selected from the group consisting of sapphire, silicon carbide (SiC), and aluminum nitride (AlN); and an annealed aluminum nitride layer formed on the base substrate and having a thickness of at least 100 nm, wherein the annealed aluminum nitride layer is formed by forming an aluminum nitride layer on the base substrate at a forming temperature; and annealing the aluminum nitride layer at an annealing temperature that is above the forming temperature and in a mixed gas atmosphere comprising nitrogen gas (N2) and carbon monoxide gas (CO), and wherein the mixed gas atmosphere has a mixture ratio of N2 gas/CO gas that ranges from 0.95/0.05 to 0.4/0.6.