主权项 |
1. A semiconductor device having a first element portion that is an operating region of an insulated gate bipolar transistor and a second element portion that is an operating region of a diode disposed in parallel on a single semiconductor substrate, wherein
the first element portion comprises:
a semiconductor layer of a first conductivity type formed by the semiconductor substrate of the first conductivity type,a first semiconductor region of a second conductivity type and provided in a first principal surface side of the semiconductor layer,a second semiconductor region of the first conductivity type and provided selectively inside the first semiconductor region,a first trench configured to reach the semiconductor layer, through the second semiconductor region and the first semiconductor region,a first gate electrode provided inside the first trench, via a first gate insulating film, anda third semiconductor region of the second conductivity type and provided in a second principal surface side of the semiconductor layer, the second element portion comprises:
the first semiconductor region,a second trench configured to reach the semiconductor layer, through the first semiconductor region,a second gate electrode provided inside the second trench, via a second gate insulating film, anda fourth semiconductor region of the first conductivity type and provided in the second principal surface side of the semiconductor layer, the semiconductor device further comprising:
a first electrode configured to contact the first semiconductor region and the second semiconductor region; anda second electrode configured to contact the third semiconductor region and the fourth semiconductor region, wherein a width of the second trench is any one among uniform along a depth direction, and narrowing from a first electrode side toward a second electrode side. |