Semiconductor device and imaging device

摘要

According to one embodiment, a semiconductor device includes a semiconductor layer including a first semiconductor portion and a second semiconductor portion being continuous with the first semiconductor portion, a first gate electrode, a second gate electrode, an insulating film. The first semiconductor portion includes a first portion, a second portion and a third portion provided between the first portion and the second portion. The second semiconductor portion includes a fourth portion separated from the first portion, a fifth portion separated from the second portion, and a sixth portion provided between the forth portion and the fifth portion. The first gate electrode is separated from the third portion. The second gate electrode is separated from the sixth portion. The insulating film is provided at a first position between the first gate electrode and the semiconductor layer and at a second position between the second gate electrode and the semiconductor layer.

主权项

1. A semiconductor device, comprising:
a semiconductor layer including a first semiconductor portion including a first portion, a second portion arranged with the first portion in a first direction, and a third portion provided between the first portion and the second portion, the third portion being continuous with the first portion and the second portion, and a second semiconductor portion being continuous with the first semiconductor portion, the second semiconductor portion including a fourth portion, a fifth portion, and a sixth portion, the fourth portion being arranged with the first portion in a second direction intersecting the first direction, the fifth portion being arranged with the second portion in the second direction, the sixth portion being provided between the fourth portion and the fifth portion, the sixth portion being continuous with the fourth portion and the fifth portion; a first gate electrode separated from the third portion in a third direction intersecting a plane including the first direction and the second direction; a second gate electrode separated from the sixth portion in the third direction and separated from the first gate electrode in the second direction; an insulating film provided at a first position between the first gate electrode and the semiconductor layer and at a second position between the second gate electrode and the semiconductor layer, the insulating film spreading continuously in a region between the first position and the second position; a first electrode separated from the first gate electrode, and separated from the second gate electrode, the first electrode being electrically connected to the first portion; a second electrode separated from the first gate electrode, separated from the second gate electrode, and separated from the first electrode, the second electrode being electrically connected to the second portion; a third electrode separated from the first gate electrode, separated from the second gate electrode, separated from the first electrode, and separated from the second electrode, the third electrode being electrically connected to the fourth portion; and a fourth electrode separated from the first gate electrode, separated from the second gate electrode, separated from the first electrode, separated from the second electrode, and separated from the third electrode, the fourth electrode being electrically connected to the fifth portion, wherein the third portion, the first gate electrode, the first electrode, and the second electrode serve as a first transistor, and the sixth portion, the second gate electrode, the third electrode, and the fourth electrode serve as a second transistor, the semiconductor layer has a first semiconductor side and a second semiconductor side, the second semiconductor side is arranged with the first semiconductor side in the second direction, the first gate electrode has a first gate side and a second gate side, the second gate side is provided between the first gate side and the second semiconductor side when projected onto the plane, the second gate side is arranged with the first gate side in the second direction, and a first distance along the second direction between the first semiconductor side and the first gate side is 0.3 micrometers or more.