发明名称 |
Metal gate structure and manufacturing method thereof |
摘要 |
A semiconductor structure includes a substrate including a first active region, a second active region and an isolation disposed between the first active region and the second active region; a plurality of gates disposed over the substrate and including a first gate extended over the first active region, the isolation and the second active region, and a second gate over the first active region and the second active region; and an inter-level dielectric (ILD) disposed over the substrate and surrounding the plurality of gates, wherein the second gate is configured not to conduct current flow and includes a first section disposed over the first active region and a second section disposed over the second active region, a portion of the ILD is disposed between the first section and the second section. |
申请公布号 |
US9614088(B2) |
申请公布日期 |
2017.04.04 |
申请号 |
US201414464197 |
申请日期 |
2014.08.20 |
申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY LTD. |
发明人 |
Ho Wei-Shuo;Chiang Tsung-Yu;Chen Kuang-Hsin |
分类号 |
H01L27/088;H01L29/66;H01L29/78;H01L29/06;H01L21/306;H01L21/02;H01L21/283;H01L21/324;H01L21/311;H01L29/51 |
主分类号 |
H01L27/088 |
代理机构 |
Muncy, Geissler, Olds & Lowe, P.C. |
代理人 |
Muncy, Geissler, Olds & Lowe, P.C. |
主权项 |
1. A semiconductor structure, comprising:
a substrate including a first active region, a second active region and an isolation disposed between the first active region and the second active region; a plurality of gates disposed over the substrate and including:
a first gate extended over the first active region, the isolation and the second active region; anda second gate over the first active region and the second active region; and an inter-level dielectric (ILD) disposed over the substrate and surrounding the plurality of gates, wherein the second gate is configured not to conduct current flow and includes a first section disposed over the first active region and a second section disposed over the second active region, a portion of the ILD is disposed between the first section and the second section and separates the first section from the second section. |
地址 |
Hsinchu TW |