Dual material finFET on single substrate

摘要

A semiconductor device and a method for fabricating the device are provided. The semiconductor device has a substrate having a first device region and a second device region. A p-type fin field effect transistor is formed in the first device region. The p-type fin field effect transistor has a first fin structure constituted of a first semiconductor material. An n-type fin field effect transistor is formed in the second device region. The n-type fin field effect transistor has a second fin structure constituted of a second semiconductor material that is different than the first semiconductor material. To fabricate the semiconductor device, a substrate having an active layer present on a dielectric layer is provided. The active layer is etched to provide a first region having the first fin structure and a second region having a mandrel structure. The second fin structure is formed on a sidewall of the mandrel structure.

主权项

1. A semiconductor device comprising:
a substrate having a first device region and a second device region; a p-type fin field effect transistor in the first device region, wherein the p-type fin field effect transistor includes a first fin structure comprised of a first semiconductor material; and an n-type fin field effect transistor in the second device region, wherein the n-type fin field effect transistor includes a second fin structure comprised of a second semiconductor material, the second semiconductor material being different than the first semiconductor material, wherein the second fin structure has a spacer shape that is different from the shape of the first fin structure.