| 发明名称 | Damascene wires with top via structures | ||
| 摘要 | Damascene wires with top via structures and methods of manufacture are provided. The semiconductor structure includes a damascene wiring structure with an integrally formed top via structure in self-alignment with the damascene wiring structure which is underneath the integrally formed top via structure. | ||
| 申请公布号 | US9613861(B2) | 申请公布日期 | 2017.04.04 |
| 申请号 | US201514818419 | 申请日期 | 2015.08.05 |
| 申请人 | GLOBALFOUNDRIES INC. | 发明人 | Anderson Brent A.;Nowak Edward J. |
| 分类号 | H01L21/768;H01L23/522;H01L23/532;H01L23/528 | 主分类号 | H01L21/768 |
| 代理机构 | Roberts Mlotkowski Safran Cole & Calderon, P.C. | 代理人 | Cain David;Calderon Andrew M.;Roberts Mlotkowski Safran Cole & Calderon, P.C. |
| 主权项 | 1. A semiconductor structure comprising a damascene wiring structure with an integrally formed top via structure in self-alignment with the damascene wiring structure which is underneath the integrally formed top via structure, wherein the damascene wiring structure has cut ends. | ||
| 地址 | Grand Cayman KY | ||