| 发明名称 | Dielectric structures with negative taper and methods of formation thereof | ||
| 摘要 | A method for forming a dielectric structure includes forming an auxiliary layer over a substrate, and forming a hole within the auxiliary layer. A fill material is deposited into the hole. The auxiliary layer is removed to form the dielectric structure having a negative taper. The dielectric structure has a top critical dimension greater than a bottom critical dimension. | ||
| 申请公布号 | US9613848(B2) | 申请公布日期 | 2017.04.04 |
| 申请号 | US201514621082 | 申请日期 | 2015.02.12 |
| 申请人 | Infineon Technologies AG | 发明人 | Engelhardt Manfred |
| 分类号 | H01L21/76;H01L21/762;H01L21/311;H01L21/02;H01L21/3105 | 主分类号 | H01L21/76 |
| 代理机构 | Slater Matsil, LLP | 代理人 | Slater Matsil, LLP |
| 主权项 | 1. A method for forming a dielectric structure, the method comprising: forming an auxiliary layer over a substrate; forming a hole within the auxiliary layer using a plasma etching, wherein a process gas during the plasma etching comprises a first component having a high build-up of polymers during the plasma etching, and a second component having a low build-up of polymers during the plasma etching, wherein a gas flow ratio of the first component relative to the second component is such that there is more of the first component than the second component; depositing a fill material into the hole; and removing the auxiliary layer to form the dielectric structure having a negative taper, the dielectric structure having a top critical dimension (CD) greater than a bottom CD. | ||
| 地址 | Neubiberg DE | ||