| 发明名称 | Resistive memory device | ||
| 摘要 | A resistive memory device includes a memory cell array having a plurality of memory cells respectively connected to a plurality of first signal lines and a plurality of second signal lines crossing each other. A first write driver is configured to provide a write voltage to write data to the memory cells. A second write driver is configured to be disposed between the memory cell array and the first write driver and provide a write current generated based on the write voltage to a first signal line selected from among the plurality of first signal lines. | ||
| 申请公布号 | US9613697(B2) | 申请公布日期 | 2017.04.04 |
| 申请号 | US201615151661 | 申请日期 | 2016.05.11 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Park Hyun-Kook;Lee Yeong-Taek;Byeon Dae-Seok |
| 分类号 | G11C11/00;G11C13/00 | 主分类号 | G11C11/00 |
| 代理机构 | Volentine & Whitt, PLLC | 代理人 | Volentine & Whitt, PLLC |
| 主权项 | 1. A resistive memory device comprising: a memory cell array including a plurality of memory cells respectively connected to a plurality of first signal lines and a plurality of second signal lines crossing each other; a first write driver configured to provide a write voltage for writing data to the memory cells; and a second write driver disposed between the memory cell array and the first write driver and configured to provide a write current generated based on the write voltage to a first signal line selected from among the plurality of first signal lines. | ||
| 地址 | Suwon-si, Gyeonggi-do KR | ||