发明名称 Solar cell manufacturing method
摘要 The present invention relates to a method for manufacturing a solar cell having excellent long-term reliability and high efficiency, said method including: a step (7) for applying a paste-like electrode agent to an antireflection film formed on the light receiving surface side of a semiconductor substrate having at least a pn junction, said electrode agent containing a conductive material; and an electrode firing step (9) having local heat treatment (step (9a)) for applying heat such that at least a part of the conductive material is fired by irradiating merely the electrode agent-applied portion with a laser beam, and whole body heat treatment (step (9b)) for heating the whole semiconductor substrate to a temperature below 800° C.
申请公布号 US9614117(B2) 申请公布日期 2017.04.04
申请号 US201314433411 申请日期 2013.08.23
申请人 SHIN-ETSU CHEMICAL CO., LTD. 发明人 Murakami Takashi;Watabe Takenori;Otsuka Hiroyuki
分类号 H01L31/18;H01L31/0216;H01L31/0224;H01L31/0312;H01L31/06;H01L31/068 主分类号 H01L31/18
代理机构 Westerman, Hattori, Daniels & Adrian, LLP 代理人 Westerman, Hattori, Daniels & Adrian, LLP
主权项 1. A method for manufacturing a solar cell, comprising: the step of applying a paste-like electrode agent containing a conductive material onto an antireflection film formed on a light-receiving surface side of a semiconductor substrate having at least a pn junction, and the electrode firing step including local heat treatment of irradiating a laser beam only to the electrode agent-applied portion to heat the portion such that at least a part of the conductive material is fired, wherein the local heat treatment has not yet achieved fire-through the antireflective film, and overall heat treatment of heating the overall semiconductor substrate at a temperature below 800° C., wherein the overall heat treatment is carried out so that the electrode agent-applied portion is fired to some extent and fired through the antireflective film, wherein the electrode agent-applied portion is completely fired and the conductive material penetrates through the antireflective film to form an electrode in ohmic contact with the semiconductor substrate by the local heat treatment and the overall heat treatment.
地址 Tokyo JP