Crystalline orientation and overhang control in collision based RF plasmas

摘要

Methods and apparatus for depositing a metal-containing layer on a substrate are provided herein. In some embodiments, a method of processing a substrate in a physical vapor deposition (PVD) chamber includes applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; optionally applying a DC power to the target to direct the plasma towards the target; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling the plasma sheath voltage between the plasma and the substrate to form a metal-containing layer having a desired crystal structure and or desired morphology on feature structures.

主权项

1. A method of processing a substrate in a physical vapor deposition (PVD) chamber, comprising:
applying RF power at a VHF frequency to a target comprising a metal disposed in the PVD chamber above the substrate to form a plasma from a plasma-forming gas; sputtering metal atoms from the target using the plasma while maintaining a first pressure in the PVD chamber sufficient to ionize a predominant portion of the sputtered metal atoms; and controlling a plasma sheath voltage between the plasma and the substrate to reduce an ion energy of the sputtered metal atoms to form a metal-containing layer having a crystal orientation that is predominantly a <002> crystal orientation relative to a <100> crystal orientation or to increase an ion energy of the sputtered metal atoms to form a metal-containing layer having a crystal orientation that is predominantly a <100> crystal orientation relative to a <002> crystal orientation.