Enhanced programming of two-terminal memory

摘要

Two-terminal memory can be set to a first state (e.g., conductive state) in response to a program pulse, or set a second state (e.g., resistive state) in response to an erase pulse. These pulses generally produce a voltage difference between the two terminals of the memory cell. Certain electrical characteristics associated with the pulses can be manipulated in order to enhance the efficacy of the pulse. For example, the pulse can be enhanced or improved to reduce power-consumption associated with the pulse, reduce a number of pulses used to successfully set the state of the memory cell, or to improve Ion distribution associated with active metal particles included in the memory cell.

主权项

1. A method, comprising:
receiving, by a controller of a memory device, an instruction to program a two-terminal memory cell comprising an interface layer situated between a first terminal and a second terminal, wherein the instruction to program relates to setting the two-terminal memory cell to a conductive state; determining, by the controller, a first set of electrical characteristics to be applied during a first period of a program pulse that, when applied to the two-terminal memory cell, sets the two-terminal memory cell to the conductive state, wherein the first set of electrical characteristics facilitate ionization of an active metal included in the two-terminal memory cell; and determining, by the controller, a second set of electrical characteristics that differ from the first set of electrical characteristics and are associated with a second period of the program pulse, wherein the second set of electrical characteristics facilitate driving active metal ions into the interface layer.