| 发明名称 | Semiconductor device | ||
| 摘要 | A semiconductor device includes a semiconductor substrate including a plurality of active areas, a bit line crossing the plurality of active areas, a direct contact connecting a first active area of the plurality of active areas with the bit line, an insulating spacer covering a side wall of the bit line and extending at a level lower than a level of an upper surface of the semiconductor substrate, a contact pad connected with a side wall of a second active area of the plurality of active areas, which neighbors the first active area, a first insulating pattern defining a contact hole exposing the insulating spacer and the contact pad, and a buried contact connected with the contact pad and filling the contact hole. | ||
| 申请公布号 | US9613966(B2) | 申请公布日期 | 2017.04.04 |
| 申请号 | US201514697782 | 申请日期 | 2015.04.28 |
| 申请人 | Samsung Electronics Co., Ltd. | 发明人 | Kim Dae-ik;Kim Hyoung-sub;Kim Sung-eui |
| 分类号 | H01L27/108 | 主分类号 | H01L27/108 |
| 代理机构 | Harness, Dickey & Pierce, P.L.C. | 代理人 | Harness, Dickey & Pierce, P.L.C. |
| 主权项 | 1. A semiconductor device comprising: a semiconductor substrate having a plurality of active areas; a bit line crossing the plurality of active areas; a direct contact connecting a first active area of the plurality of active areas with the bit line; an insulating spacer substantially covering a side wall of the bit line and extending at a level lower than a level of an upper surface of the semiconductor substrate; a contact pad connected with a side wall of a second active area of the plurality of active areas, the contact pad being next to the first active area; a first insulating pattern defining a contact hole exposing the insulating spacer and the contact pad; and a buried contact connected to the contact pad and filling the contact hole. | ||
| 地址 | Gyeonggi-do KR | ||