Embedded transistor

摘要

An embedded transistor for an electrical device, such as a DRAM memory cell, and a method of manufacture thereof is provided. A trench is formed in a substrate and a gate dielectric and a gate electrode formed in the trench of the substrate. Source/drain regions are formed in the substrate on opposing sides of the trench. In an embodiment, one of the source/drain regions is coupled to a storage node and the other source/drain region is coupled to a bit line. In this embodiment, the gate electrode may be coupled to a word line to form a DRAM memory cell.

主权项

1. A device comprising:
a substrate; a first recess and a second recess in the substrate, the first recess having a first bottom and the second recess having a second bottom, the first bottom and the second bottom being at a same first depth; a dielectric material filling the first recess; a gate dielectric along sidewalls and a bottom of the second recess; a gate electrode over the gate dielectric, the gate electrode having a top surface below an uppermost surface of the substrate; and source/drain regions in the substrate on opposing sides of the second recess.