Microelectronic package utilizing multiple bumpless build-up structures and through-silicon vias

摘要

A microelectronic package having a first bumpless build-up layer structure adjacent an active surface and sides of a microelectronic device and a second bumpless build-up layer structure adjacent a back surface of the microelectronic device, wherein conductive routes are formed through the first bumpless build-up layer from the microelectronic device active surface to conductive routes in the second bumpless build-up layer structure and wherein through-silicon vias adjacent the microelectronic device back surface and extending into the microelectronic device are electrically connected to the second bumpless build-up layer structure conductive routes.

主权项

1. A microelectronic package, comprising:
a microelectronic device having an active surface and an opposing back surface, and at least one through-silicon via extending into the microelectronic device from the microelectronic device back surface; a first bumpless build-up layer structure formed adjacent the active surface and at least one side of the microelectronic device, wherein the first bumpless build-up layer structure includes a first surface proximate the microelectronic device active surface and a second surface on the same plane with the microelectronic device back surface; and a second bumpless build-up layer structure formed adjacent the microelectronic device back surface and abutting the first bumpless build-up layer structure second surface.