Ultra-thin dielectric diffusion barrier and etch stop layer for advanced interconnect applications

摘要

Implementations described herein generally relate to the formation of a silicon and aluminum containing layer. Methods described herein can include positioning a substrate in a process region of a process chamber; delivering a process gas to the process region, the process gas comprising an aluminum-containing gas and a silicon-containing gas; activating a reactant gas comprising a nitrogen-containing gas, a hydrogen containing gas, or combinations thereof; delivering the reactant gas to the process gas to create a deposition gas that deposits a silicon and aluminum containing layer on the substrate; and purging the process region. The above elements can be performed one or more times to deposit an etch stop stack.

主权项

1. A method of depositing a layer, comprising:
positioning a substrate in a process region of a process chamber, wherein the substrate has a dielectric layer disposed over a surface of the substrate, and conductive contacts are disposed within the dielectric layer; delivering a process gas to the process region, the process gas comprising an aluminum-containing gas and a silicon-containing gas; activating a reactant gas, the reactant gas comprising a nitrogen-containing gas; delivering the reactant gas to the process gas to create a deposition gas, the deposition gas depositing a silicon and aluminum containing layer on the dielectric layer; and purging the process region.