| 发明名称 | FinFET devices | ||
| 摘要 | FinFET devices and processes to prevent fin or gate collapse (e.g., flopover) in finFET devices are provided. The method includes forming a first set of trenches in a semiconductor material and filling the first set of trenches with insulator material. The method further includes forming a second set of trenches in the semiconductor material, alternating with the first set of trenches that are filled. The second set of trenches form semiconductor structures which have a dimension of fin structures. The method further includes filling the second set of trenches with insulator material. The method further includes recessing the insulator material within the first set of trenches and the second set of trenches to form the fin structures. | ||
| 申请公布号 | US9613869(B2) | 申请公布日期 | 2017.04.04 |
| 申请号 | US201615182048 | 申请日期 | 2016.06.14 |
| 申请人 | INTERNATIONAL BUSINESS MACHINES CORPORATION | 发明人 | Basker Veeraraghavan S.;Cheng Kangguo;Standaert Theodorus E.;Wang Junli |
| 分类号 | H01L21/331;H01L21/8234;H01L21/762;H01L21/02;H01L21/306;H01L21/324 | 主分类号 | H01L21/331 |
| 代理机构 | Roberts Mlotkowski Safran Cole & Calderon, P.C. | 代理人 | Meyers Steven;Calderon Andrew M.;Roberts Mlotkowski Safran Cole & Calderon, P.C. |
| 主权项 | 1. A method comprising: forming a first set of trenches in a semiconductor material; filling the first set of trenches with insulator material; forming a second set of trenches in the semiconductor material, alternating with the first set of trenches that are filled, the second set of trenches forming semiconductor structures which have a dimension of fin structures; filling the second set of trenches with insulator material; recessing the insulator material within the first set of trenches and the second set of trenches to form the fin structures; and providing a doped epitaxial growth at a bottom of the first set of trenches. | ||
| 地址 | Armonk NY US | ||