Low capacitance interconnect structures and associated systems and methods

摘要

Semiconductor device interconnect structures having low capacitance and associated systems and methods are disclosed herein. In one embodiment, a method of manufacturing an interconnect structure includes forming an opening in a surface of a semiconductor device and forming an interconnect structure at least within the opening. Forming the interconnect structure includes depositing a first insulator material on both the surface and a sidewall of the opening, selectively removing a first portion of the first insulator material on the surface over a second portion of the first insulator material on the sidewall, depositing a second insulator material on the second portion, and depositing a conductive material on the second insulator material. The method further includes selecting the thickness of the first and second insulators materials based on a threshold level of capacitance between the sidewall and the conductive material.

主权项

1. A semiconductor device, comprising:
a semiconductor die including a substrate and an opening formed in the substrate, wherein the substrate includes a first side, a second side opposite the first side, and a sidewall extending through the opening, wherein the opening has a length defined at least between the first and second sides of the substrate; and an interconnect structure, including—
a conductor at least partially filling the opening, anda composite insulator at least between the sidewall and the conductor, wherein the composite insulator includes a first insulator formed by chemical vapor deposition (CVD) on the sidewall, and a second insulator formed by CVD on the first insulator, wherein the second insulator is between the first insulator and the conductor, wherein the first insulator has a first thickness in the range between about 0.1 μm and 1.5 μm, and the second insulator has a second thickness of about at least 0.01 μm, and wherein the first thickness is greater than or equal to the second thickness over the length of the opening.