| 发明名称 | Method and apparatus for back end of line semiconductor device processing | ||
| 摘要 | A method of forming a device may include: forming an opening through a dielectric layer and an underlying etching stop layer to expose a metal line. The method may further include the step of catalytically growing a graphene layer on an exposed surface of the metal line, and depositing an amorphous carbon layer on sidewalls of the opening. The steps of catalytically growing the graphene layer and depositing the amorphous carbon layer may be performed simultaneously. | ||
| 申请公布号 | US9613854(B2) | 申请公布日期 | 2017.04.04 |
| 申请号 | US201514853104 | 申请日期 | 2015.09.14 |
| 申请人 | Taiwan Semiconductor Manufacturing Company, Ltd. | 发明人 | Yang Shin-Yi;Lee Hsiang-Huan;Lee Ming-Han;Yeh Ching-Fu;Liou Pei-Yin |
| 分类号 | H01L21/44;H01L21/768;H01L23/522;H01L23/532 | 主分类号 | H01L21/44 |
| 代理机构 | Slater Matsil, LLP | 代理人 | Slater Matsil, LLP |
| 主权项 | 1. A method of manufacturing a device, the method comprising: forming an opening through a dielectric layer and an underlying etching stop layer to expose a metal line; catalytically growing a graphene layer on an exposed surface of the metal line; and depositing an amorphous carbon layer on sidewalls of the opening, wherein the steps of catalytically growing the graphene layer and depositing the amorphous carbon layer are performed simultaneously. | ||
| 地址 | Hsin-Chu TW | ||