Lithographic technique for feature cut by line-end shrink

摘要

A technique for patterning a workpiece such as an integrated circuit workpiece is provided. In an exemplary embodiment, the method includes receiving a dataset specifying a plurality features to be formed on the workpiece. A first patterning of a hard mask of the workpiece is performed based on a first set of features of the plurality of features, and a first spacer material is deposited on a sidewall of the patterned hard mask. A second patterning is performed based on a second set of features, and a second spacer material is deposited on a sidewall of the first spacer material. A third patterning is performed based on a third set of features. A portion of the workpiece is selectively processed using a pattern defined by a remainder of at least one of the patterned hard mask layer, the first spacer material, or the second spacer material.

主权项

1. A method comprising:
receiving a workpiece including a material layer and a hard mask material disposed thereupon; performing a lithographic patterning of the hard mask material to define a recess therein, wherein the patterned hard mask material further defines a linking feature; depositing a spacer within the recess of the patterned hard mask material to define at least two physically separated feature regions within the recess, wherein the linking feature is disposed between the at least two physically separated feature regions; and selectively processing a portion of the workpiece based on a pattern defined by the patterned hard mask material and the spacer within the recess.