Magnetic-field and magnetic-field gradient sensors based on lateral SOI bipolar transistors

摘要

A lateral bipolar junction transistor (BJT) magnetic field sensor that includes a layout of two or more adjacent lateral BJT devices. Each BJT includes a semiconductor base region of a first conductivity type doping, a semiconductor emitter region of a second conductivity type doping and laterally contacting the base region; and a first semiconductor collector region of a second conductivity type doping contacting said base region on an opposite side thereof. A second collector region of the second conductivity type doping is also formed contacting the base region on the opposite side thereof in spaced apart relation with the first collector region. The first adjacent lateral BJT device includes the emitter, base and first collector region and the second adjacent lateral BJT device includes the emitter, base and second collector region. The sensor induces a detectable difference in collector current amounts in the presence of an external magnetic field transverse to a plane defined by the layout.

主权项

1. A method of forming a semiconductor structure including a lateral bipolar junction transistor (BJT) comprising:
providing a silicon on insulator structure, said silicon on insulator structure comprising an insulator layer formed atop a bottom semiconductor substrate, and having a top semiconductor layer formed on a top surface of said insulator layer, said top semiconductor layer having a doping of a first conductivity type; forming first and second trench isolation regions to define a base region of said top semiconductor layer of the first conductivity type doping; forming a top base contact structure including semiconductor material on a surface of said defined base region, said formed top base contact structure of semiconductor material having a doping of the first conductivity type; provide dielectric spacer structures at opposite sides of said base contact structure such that said dielectric spacer structures overlay respective opposite portions of said defined base region of said top semiconductor layer; converting a first region of said defined base region of said top semiconductor layer into an emitter region by introducing dopants of a second conductivity type that is the opposite of said first conductivity type into said defined base region underlying a first dielectric spacer structure, wherein a remaining portion of said base region portion laterally contacts said emitter region; and converting at least two second regions of said top segment portion of said top semiconductor layer into at least two collector regions by introducing dopants of the second conductivity type into said defined base region underlying an opposite side dielectric spacer structure, wherein each of the at least two collector regions are in spaced apart relation, and wherein a remaining portion of said base region laterally contacts each said at least two collector regions.