Enriched, high mobility strained fin having bottom dielectric isolation

摘要

Embodiments are directed to a method of enriching and electrically isolating a fin of a FinFET. The method includes forming at least one fin. The method further includes forming under a first set of conditions an enriched upper portion of the at least one fin. The method further includes forming under a second set of conditions an electrically isolated region from a lower portion of the at least one fin, wherein forming under the first set of conditions is spaced in time from forming under the second set of conditions. The method further includes controlling the first set of conditions separately from the second set of conditions.

主权项

1. An electrically isolated feature of a fin-type field effect transistor (FinFET), the feature comprising:
an upper portion comprising a first element diffused into the upper portion to a predetermined concentration level; and an electrically isolated region comprising an oxidized region having a predetermined oxidation level; wherein an upper limit of the predetermined concentration level of the upper portion is not limited by the predetermined oxidation level of the oxidized region.