Semiconductor ESD protection device

摘要

A semiconductor device includes high-voltage (HV) and low-voltage (LV) MOS's formed in a substrate. The HV MOS includes a first semiconductor region having a first-type conductivity and a first doping level, a second semiconductor region having the first-type conductivity and a second doping level lower than the first doping level, a third semiconductor region having a second-type conductivity, and a fourth semiconductor region having the first-type conductivity. The first, second, third, and fourth semiconductor regions are arranged along a first direction, and are drain, drift, channel, and source regions, respectively, of the HV MOS. The LV MOS includes the fourth semiconductor region, a fifth semiconductor region having the second-type conductivity, and a sixth semiconductor region having the first-type conductivity. The fourth, fifth, and sixth semiconductor regions are arranged along a second direction different from the first direction, and are drain, channel, and source regions, respectively, of the LV MOS.

主权项

1. A semiconductor device comprising:
a substrate; a high-voltage (HV) metal-on-semiconductor (MOS) structure formed in the substrate, the HV MOS structure including:
a first semiconductor region having a first-type conductivity and a first doping level, the first semiconductor region being a drain region of the HV MOS structure;a second semiconductor region having the first-type conductivity and a second doping level lower than the first doping level, the second semiconductor region being a drift region of the HV MOS structure;a third semiconductor region having a second-type conductivity, the third semiconductor region being a channel region of the HV MOS structure; anda fourth semiconductor region having the first-type conductivity, the fourth semiconductor region being a source region of the HV MOS structure,wherein the first, second, third, and fourth semiconductor regions are arranged along a first direction in this order; a low-voltage (LV) MOS structure formed in the substrate, the LV MOS structure including:
a fifth semiconductor region having the second-type conductivity, the fifth semiconductor region being a channel region of the LV MOS structure; anda sixth semiconductor region having the first-type conductivity, the sixth semiconductor region being a source region of the LV MOS structure,wherein:
the fourth semiconductor region is a drain region of the LV MOS structure, andthe fourth, fifth, and sixth semiconductor regions are arranged along a second direction different from the first direction in this order.