| 发明名称 |
Semiconductor process for treating metal gate |
| 摘要 |
A semiconductor process for treating a metal gate includes the following steps. A metal gate including a main conductive material on a substrate is provided. A H2/N2 plasma treatment process is performed to reduce the main conductive material. |
| 申请公布号 |
US9613826(B2) |
申请公布日期 |
2017.04.04 |
| 申请号 |
US201514811852 |
申请日期 |
2015.07.29 |
| 申请人 |
UNITED MICROELECTRONICS CORP. |
发明人 |
Tai Cheng-Chi;Tao Chun-Ju;Huang Chung-Che |
| 分类号 |
H01L21/283;H01L21/3213;H01L29/51;H01L21/311;H01L29/66;H01L29/49;H01L21/768;H01L29/45 |
主分类号 |
H01L21/283 |
| 代理机构 |
|
代理人 |
Hsu Winston;Margo Scott |
| 主权项 |
1. A semiconductor process for treating a metal gate, comprising:
providing a metal gate comprising a main conductive material on a substrate; performing a H2/N2 plasma treatment process to deoxidize the main conductive material; and forming a contact plug contacting the main conductive material after the H2/N2 plasma treatment process is performed. |
| 地址 |
Hsin-Chu TW |
