发明名称 Semiconductor device
摘要 A semiconductor device includes a voltage hold circuit that raises a second boosted voltage with rise of an output voltage of a booster circuit that generates a first boosted voltage and then maintains the second boosted voltage at a point when the output voltage reaches a hold voltage level after that, and a first switch that short-circuits a first output terminal through which the first boosted voltage is output and a second output terminal through which the second boosted voltage is output until the output voltage reaches the hold voltage level.
申请公布号 US9614439(B2) 申请公布日期 2017.04.04
申请号 US201514918905 申请日期 2015.10.21
申请人 Renesas Electronics Corporation 发明人 Yamashiro Masao;Bando Tatsuya;Kamada Kunitoshi;Sato Hiroshi
分类号 H02M3/07;H02M3/156;G05F1/625;G11C16/28;G11C16/30;G11C5/14 主分类号 H02M3/07
代理机构 Sughrue Mion, PLLC 代理人 Sughrue Mion, PLLC
主权项 1. A semiconductor device comprising: a booster circuit configured to boost an input voltage and generate a first boosted voltage; a voltage hold circuit configured to hold a second boosted voltage having a smaller absolute value than the first boosted voltage; a first output terminal configured to output the first boosted voltage as first output; a second output terminal configured to output the second boosted voltage as second output; a first switch that is placed between the first output terminal and the second output terminal; and a control circuit configured to generate a switch signal for switching the first switch from close to open in response to an output voltage of the booster circuit reaching a hold voltage level set to the voltage hold circuit, wherein during a first period when the switch signal indicates close of the first switch, the voltage hold circuit is further configured to increase or decrease a voltage value of the second boosted voltage to be output in accordance with the output voltage of the booster circuit, and during a second period when the switch signal indicates open of the first switch, the voltage hold circuit is further configured to maintain a constant voltage value of the second boosted voltage at a point when a value of the switch signal is switched from close to open.
地址 Koutou-ku, Tokyo JP