发明名称 |
Semiconductor device |
摘要 |
A semiconductor device includes a voltage hold circuit that raises a second boosted voltage with rise of an output voltage of a booster circuit that generates a first boosted voltage and then maintains the second boosted voltage at a point when the output voltage reaches a hold voltage level after that, and a first switch that short-circuits a first output terminal through which the first boosted voltage is output and a second output terminal through which the second boosted voltage is output until the output voltage reaches the hold voltage level. |
申请公布号 |
US9614439(B2) |
申请公布日期 |
2017.04.04 |
申请号 |
US201514918905 |
申请日期 |
2015.10.21 |
申请人 |
Renesas Electronics Corporation |
发明人 |
Yamashiro Masao;Bando Tatsuya;Kamada Kunitoshi;Sato Hiroshi |
分类号 |
H02M3/07;H02M3/156;G05F1/625;G11C16/28;G11C16/30;G11C5/14 |
主分类号 |
H02M3/07 |
代理机构 |
Sughrue Mion, PLLC |
代理人 |
Sughrue Mion, PLLC |
主权项 |
1. A semiconductor device comprising:
a booster circuit configured to boost an input voltage and generate a first boosted voltage; a voltage hold circuit configured to hold a second boosted voltage having a smaller absolute value than the first boosted voltage; a first output terminal configured to output the first boosted voltage as first output; a second output terminal configured to output the second boosted voltage as second output; a first switch that is placed between the first output terminal and the second output terminal; and a control circuit configured to generate a switch signal for switching the first switch from close to open in response to an output voltage of the booster circuit reaching a hold voltage level set to the voltage hold circuit, wherein during a first period when the switch signal indicates close of the first switch, the voltage hold circuit is further configured to increase or decrease a voltage value of the second boosted voltage to be output in accordance with the output voltage of the booster circuit, and during a second period when the switch signal indicates open of the first switch, the voltage hold circuit is further configured to maintain a constant voltage value of the second boosted voltage at a point when a value of the switch signal is switched from close to open. |
地址 |
Koutou-ku, Tokyo JP |