发明名称 Method for fabricating display device and display device
摘要 A method for fabricating a display device includes forming a thin film transistor on a base substrate, forming a first electrode connected to the thin film transistor, forming a pixel defining layer overlapping a portion of the first electrode, such that the pixel defining layer exposes a portion of the first electrode and partitions pixel areas, forming a block copolymer layer on the first electrode and the pixel defining layer, patterning the block copolymer layer, etching the pixel defining layer by using the patterned block copolymer layer as a mask, such that an uneven pixel defining layer with a plurality of defining layer grooves is formed, and forming a light emitting layer on the first electrode and the uneven pixel defining layer.
申请公布号 US9614015(B2) 申请公布日期 2017.04.04
申请号 US201514704002 申请日期 2015.05.05
申请人 Samsung Display Co., Ltd. 发明人 Park Seungwon;Lee Baek Hee;Choi Manseob;Kang Minhyuck;Lee Moongyu
分类号 H01L29/18;H01L27/32;H01L51/52;G03F7/004 主分类号 H01L29/18
代理机构 Lee & Morse, P.C. 代理人 Lee & Morse, P.C.
主权项 1. A method for fabricating a display device, the method comprising: forming a thin film transistor on a base substrate; forming a first electrode connected to the thin film transistor; forming a pixel defining layer overlapping a portion of the first electrode, such that the pixel defining layer exposes a portion of the first electrode and partitions pixel areas; forming a block copolymer layer on the first electrode and the pixel defining layer; patterning the block copolymer layer; etching the pixel defining layer by using the patterned block copolymer layer as a mask, such that an uneven pixel defining layer with a plurality of defining layer grooves is formed; and forming a light emitting layer on the first electrode and the uneven pixel defining layer.
地址 Yongin, Gyeonggi-do KR