| 摘要 |
A semiconductor device (101) includes a plurality of pixel regions Pix arranged in a matrix having a row direction and a column direction, wherein each of the plurality of pixel regions Pix includes a thin film transistor (10) which includes a gate electrode (2), a gate insulating layer (5) covering the gate electrode, an oxide semiconductor layer (7A) provided on the gate insulating layer, and a source electrode (9s) and a drain electrode (9d) which are electrically connected to the oxide semiconductor layer, a metal oxide layer (7B) formed out of a same oxide film as the oxide semiconductor layer, an interlayer insulating layer (13) covering the thin film transistor and the metal oxide layer, and a pixel electrode (15) provided on the interlayer insulating layer and electrically connected to the drain electrode, the metal oxide layer (7B) includes a conductor region (70c), and the pixel electrode (15) overlaps with at least a part of the conductor region (70c) with the interlayer insulating layer (13) interposed therebetween. |
| 主权项 |
1. A semiconductor device comprising a substrate, a plurality of pixel regions arranged on the substrate in a matrix having a row direction and a column direction, a plurality of gate lines each extending generally parallel in the row direction, and a plurality of source lines each extending generally parallel in the column direction,wherein
each of the plurality of pixel regions includes
a thin film transistor supported on the substrate, the thin film transistor including a gate electrode, a gate insulating layer covering the gate electrode, an oxide semiconductor layer provided on the gate insulating layer, and a source electrode and a drain electrode which are electrically connected to the oxide semiconductor layer,a metal oxide layer formed out of a same oxide film as the oxide semiconductor layer,an interlayer insulating layer covering the thin film transistor and the metal oxide layer, anda pixel electrode provided on the interlayer insulating layer and electrically connected to the drain electrode, the metal oxide layer includes a conductor region, and the pixel electrode overlaps with at least a part of the conductor region with the interlayer insulating layer interposed therebetween, and wherein the plurality of pixel regions include a first pixel region and a second pixel region adjoining the first pixel region in the column direction, and the conductor regions of the metal oxide layers which are present in the first pixel region and the second pixel region are electrically connected to each other. |
