| 发明名称 | Bandgap reference circuit | ||
| 摘要 | A bandgap reference circuit including two sets of bipolar junction transistors (BJTs). A first set of two or more BJTs configured to electrically connect in a parallel arrangement. The first set of BJTs is configured to produce a first proportional to absolute temperature (PTAT) signal. A second set of two or more BJTs configured to electrically connect in a parallel arrangement. The second set of BJTs is configured to produce a second PTAT signal. A circuitry configured to electrically connect to the first set of BJTs and the second set of BJTs. The circuitry is configured to combine the first PTAT signal and the second PTAT signal to produce a reference voltage. | ||
| 申请公布号 | US9612606(B2) | 申请公布日期 | 2017.04.04 |
| 申请号 | US201213472063 | 申请日期 | 2012.05.15 |
| 申请人 | TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY, LTD. | 发明人 | Horng Jaw-Juinn;Yu Kuo-Feng;Chen Chung-Hui |
| 分类号 | G05F3/30 | 主分类号 | G05F3/30 |
| 代理机构 | Hauptman Ham, LLP | 代理人 | Hauptman Ham, LLP |
| 主权项 | 1. A bandgap reference circuit, comprising: a first set of two or more bipolar junction transistors (BJTs) configured to electrically connect in a parallel arrangement, wherein the first set of BJTs is configured to produce a first proportional to absolute temperature (PTAT) signal; and a second set of two or more BJTs configured to electrically connect in a parallel arrangement, wherein the second set of BJTs is configured to produce a second PTAT signal, wherein the first set and the second set of BJTS are collectively arranged in a centroid type pattern, and a number of BJTs in the second set is defined by Q=(n+E)×(m+E)−n×m, where Q is the number of BJTs in the second set, n is a number of rows of BJTs in the first set, m is a number of columns of BJTs in the first set, and E is an even integer. | ||
| 地址 | TW | ||