发明名称 METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE
摘要 The present invention provides a technique for improving the productivity of a processing apparatus including a plurality of process chambers. There is provided a technique including a method for manufacturing a semiconductor device including: (a) transferring a last remaining substrate stored in an xth storage unit of a plurality of storage units to an empty nth chamber in an mth processing unit of a plurality of processing units; and (b) transferring a first one of a plurality of substrates stored in an (x+1)th storage unit of the plurality of storage units to one of chambers in an (m+1)th processing unit of the plurality of processing units (where x, m and n are natural numbers).
申请公布号 US2017092517(A1) 申请公布日期 2017.03.30
申请号 US201514979898 申请日期 2015.12.28
申请人 HITACHI KOKUSAI ELECTRIC INC. 发明人 OHASHI Naofumi;KIKUCHI Toshiyuki;MATSUI Shun;TAKASAKI Tadashi
分类号 H01L21/67;H01L21/687;H01L21/677 主分类号 H01L21/67
代理机构 代理人
主权项 1. A method for manufacturing a semiconductor device using an apparatus comprising: a plurality of processing units wherein each of the plurality of processing units comprises a plurality of chambers where a plurality of substrates are processed; a vacuum transfer chamber connected to the plurality of processing units; a load lock chamber connected to the vacuum transfer chamber; a stage where a plurality of storage units loaded with the plurality of substrates are placed; an atmosphere transfer chamber disposed between the load lock chamber and the stage and having a first transfer robot installed therein; and a second transfer robot disposed in the vacuum transfer chamber and configured to transfer the plurality of substrates, two substrates at a time, between the load lock chamber and the plurality of chambers, the method comprising: (a) transferring a last remaining substrate stored in an xth storage unit of the plurality of storage units to an empty nth chamber in an mth processing unit of the plurality of processing units and supplying a process gas into each of the plurality of chambers to process the plurality of substrates; and (b) transferring a first two substrates of the plurality of substrates stored in an (x+1)th storage unit of the plurality of storage units to the plurality of chambers in an (m+1)th processing unit of the plurality of processing units after transferring the last remaining substrate into the empty nth chamber and before processing of the last remaining substrate in the step (a) is completed (where x, m and n are natural numbers).
地址 Tokyo JP