| 发明名称 |
METHOD FOR BOTTOM-UP DEPOSITION OF A FILM IN A RECESSED FEATURE |
| 摘要 |
Embodiments of the invention provide a processing method for bottom-up deposition of a film in a recessed feature. According to one embodiment, the method includes a) providing a substrate containing a recessed feature having a bottom and a sidewall, b) depositing a film on the bottom and on the sidewall of the recessed feature, and c) covering the film at the bottom of the recessed feature with a mask layer. The method further includes d) etching the film from the sidewall, and e) removing the mask layer to expose the film at the bottom of the recessed feature. Steps b)-e) may be repeated at least once until the film at the bottom of the recessed feature has a desired thickness. In one example, the recessed feature may be filled with the film. |
| 申请公布号 |
US2017092508(A1) |
申请公布日期 |
2017.03.30 |
| 申请号 |
US201615273124 |
申请日期 |
2016.09.22 |
| 申请人 |
Tokyo Electron Limited |
发明人 |
Tapily Kandabara N.;O'Meara David L.;Kumar Kaushik A. |
| 分类号 |
H01L21/306;H01L21/308;H01L21/768 |
主分类号 |
H01L21/306 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A processing method, comprising:
a) providing a substrate containing a recessed feature having a bottom and a sidewall; b) depositing a film on the bottom and on the sidewall; c) covering the film at the bottom with a mask layer; d) etching the film from the sidewall; and e) removing the mask layer to expose the film at the bottom. |
| 地址 |
Tokyo JP |
