| 发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE, SUBSTRATE PROCESSING APPARATUS, AND RECORDING MEDIUM |
| 摘要 |
A method of manufacturing a semiconductor device includes: providing a substrate; and forming a film on the substrate by supplying a silicon hydride and a halogen element-free catalyst containing one of a group III element or a group V element to the substrate, under a condition that the silicon hydride is not thermally decomposed when the silicon hydride is present alone. |
| 申请公布号 |
US2017092486(A1) |
申请公布日期 |
2017.03.30 |
| 申请号 |
US201615274140 |
申请日期 |
2016.09.23 |
| 申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
NITTA Takafumi;SHIMAMOTO Satoshi;HIROSE Yoshiro |
| 分类号 |
H01L21/02;C23C16/46;C23C16/24;C23C16/52 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method of manufacturing a semiconductor device, comprising:
providing a substrate; and forming a film on the substrate by supplying a silicon hydride and a halogen element-free catalyst containing one of a group III element or a group V element to the substrate, under a condition that the silicon hydride is not thermally decomposed when the silicon hydride is present alone. |
| 地址 |
Tokyo JP |
