| 发明名称 |
METHOD AND APPARATUS FOR DRYING SEMICONDUCTOR SUBSTRATES USING LIQUID CARBON DIOXIDE |
| 摘要 |
Method and apparatus for rinsing and drying a semiconductor substrate having a first rinse liquid such as water on the substrate in a substrate processing system. The method includes dispensing onto the substrate liquid carbon dioxide to displace any liquid present on the substrate and to dry the substrate. The apparatus includes a chamber for rinsing and drying the substrate. |
| 申请公布号 |
US2017092484(A1) |
申请公布日期 |
2017.03.30 |
| 申请号 |
US201615281955 |
申请日期 |
2016.09.30 |
| 申请人 |
Tokyo Electron Limited |
发明人 |
Brown Ian J.;Printz Wallace P.;Rotondaro Antonio Luis Pacheco;Goshi Gentaro;Egashira Keisuke |
| 分类号 |
H01L21/02;B08B3/10;C11D11/00;H01L21/687;H01L21/67;C11D7/04;B08B3/08;H01L21/324 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for rinsing and drying a substrate having a first rinse liquid on the substrate in a substrate processing system, comprising:
dispensing onto the substrate liquid carbon dioxide (CO2), to displace any liquid present on the substrate and to dry the substrate. |
| 地址 |
Tokyo JP |
