| 发明名称 |
Post-CMP Cleaning and Apparatus |
| 摘要 |
A method includes performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush. The first brush rotates to clean the wafer. The method further includes performing a second post-CMP cleaning on the wafer using a second brush. The second brush rotates to clean the wafer. The first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously. |
| 申请公布号 |
US2017092481(A1) |
申请公布日期 |
2017.03.30 |
| 申请号 |
US201514870946 |
申请日期 |
2015.09.30 |
| 申请人 |
Taiwan Semiconductor Manufacturing Company, Ltd. |
发明人 |
Huang Fu-Ming;Chen Liang-Guang;Chang Ting-Kui;Lin Chun-Chieh |
| 分类号 |
H01L21/02;B08B1/04;H01L21/67;H01L21/306;H01L21/687;B08B1/00;B08B3/04 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method comprising:
performing a first post Chemical Mechanical Polish (CMP) cleaning on a wafer using a first brush, wherein the first brush rotates to clean the wafer; and performing a second post-CMP cleaning on the wafer using a second brush, wherein the second brush rotates to clean the wafer, and the first post-CMP cleaning and the second post-CMP cleaning are performed simultaneously. |
| 地址 |
Hsin-Chu TW |
