SEMICONDUCTOR DEVICE

摘要

A semiconductor device may include first conductive patterns and first interlayer insulating layers. Each of the first conductive patterns may include a first pad pattern extending in a first direction and first line patterns extending from the first pad pattern in a second direction crossing the first direction, widths of the first line patterns increasing as a distance from the first pad pattern decreases. The first conductive patterns and the first interlayer insulating layers may be stacked on top of each other.

主权项

1. A semiconductor device comprising:
first conductive patterns each including a first pad pattern extending in a first direction and first line patterns extending from the first pad pattern in a second direction crossing the first direction, widths of the first line patterns increasing as a distance from the first pad pattern decreases; and first interlayer insulating layers, wherein the first conductive patterns and the first interlayer insulating layers are alternately stacked on top of each other.