SEMICONDUCTOR DEVICE AND METHOD FOR MANUFACTURING THE SAME

摘要

To improve reliability of SRAM. In a memory cell of the SRAM, a coupling capacitance is provided between memory nodes in consideration of dynamic stability.

主权项

1. A semiconductor device comprising:
a first SRAM cell with a first capacitive element provided between a first node connected to a first bit line and a second node connected to a second bit line; and a second SRAM cell with a second capacitive element provided between a third node connected to the first bit line and a fourth node connected to the second bit line, wherein the first capacitive element is disposed to be closer to the first bit line side than to a middle point of the first bit line and the second bit line, and the second capacitive element is disposed to be closer to the second bit line side than to the middle point of the first bit line and the second bit line.