发明名称 |
Content Addressable Memory Device Having Electrically Floating Body Transistor |
摘要 |
A content addressable memory cell includes a first floating body transistor and a second floating body transistor. The first floating body transistor and the second floating body transistor are electrically connected in series through a common node. The first floating body transistor and the second floating body transistor store complementary data. |
申请公布号 |
US2017092359(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
US201514867308 |
申请日期 |
2015.09.28 |
申请人 |
Zeno Semiconductor, Inc. |
发明人 |
Louie Benjamin S.;Han Jin-Woo;Widjaja Yuniarto |
分类号 |
G11C15/04;H01L27/108 |
主分类号 |
G11C15/04 |
代理机构 |
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代理人 |
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主权项 |
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地址 |
Cupertino CA US |