发明名称 Content Addressable Memory Device Having Electrically Floating Body Transistor
摘要 A content addressable memory cell includes a first floating body transistor and a second floating body transistor. The first floating body transistor and the second floating body transistor are electrically connected in series through a common node. The first floating body transistor and the second floating body transistor store complementary data.
申请公布号 US2017092359(A1) 申请公布日期 2017.03.30
申请号 US201514867308 申请日期 2015.09.28
申请人 Zeno Semiconductor, Inc. 发明人 Louie Benjamin S.;Han Jin-Woo;Widjaja Yuniarto
分类号 G11C15/04;H01L27/108 主分类号 G11C15/04
代理机构 代理人
主权项
地址 Cupertino CA US