METHOD FOR PRODUCING SILICON CARBIDE EPITAXIAL SUBSTRATE, METHOD FOR MANUFACTURING SILICON CARBIDE SEMICONDUCTOR DEVICE, AND APPARATUS FOR PRODUCING SILICON CARBIDE EPITAXIAL SUBSTRATE

摘要

A method for producing a silicon carbide epitaxial substrate according to the present disclosure comprises the following steps: a step wherein a silicon carbide single crystal substrate having a diameter of 100 mm or more is arranged within a reaction chamber; a step wherein a mixed gas is produced by mixing a first gas that contains carbon and is in a thermally decomposed state, a second gas containing silicon and a third gas containing nitrogen; a step wherein the mixed gas is introduced into the reaction chamber; and a step wherein a silicon carbide layer is formed on the silicon carbide single crystal substrate by heating the mixed gas within the reaction chamber.