METHOD OF PRODUCTION OF A SEMICONDUCTING STRUCTURE COMPRISING A STRAINED PORTION

摘要

A method of production of a semiconducting structure including a strained portion tied to a support layer by molecular bonding, including the steps in which a cavity is produced situated under a structured part so as to strain a central portion by lateral portions, and the structured part is placed in contact and molecularly bonded with a support layer, wherein a consolidation annealing is performed, and a distal part of the lateral portions in relation to the strained portion is etched.

主权项

1. A method of production of a semiconducting structure comprising a strained portion tied to a support layer by molecular bonding, comprising the steps of:
i. providing a stack, formed of a semiconducting layer covering a sacrificial layer disposed on a support layer; ii. structuring the semiconducting layer in such a way as to form a structured part and a peripheral part, the structured part comprising a central portion linked to the peripheral part by at least two lateral portions opposite one another in relation to the central portion; iii. producing a cavity situated under the structured part, by etching of the sacrificial layer, so as to render free a surface of the support layer situated at the level of the cavity and to strain the central portion, termed the strained portion, by the lateral portions, and placing the structured part in contact with said free surface so as to bind the structured part of said free surface by molecular bonding; iv. determining a minimum value of molecular bonding energy of the structured part on the support layer, together with a minimum value of bonded area of the lateral portions on the support layer, these minimum values being such that said molecular bonding energy is greater than an elastic energy of the structured part; v. performing a consolidation annealing at an annealing temperature such that the molecular bonding energy exhibits a value greater than or equal to said previously determined minimum value; vi. etching a distal part of the lateral portions in relation to the strained portion, so that the bonded area of the lateral portions exhibits a value greater than or equal to said previously determined minimum value, thus obtaining said semiconducting structure.