METHOD FOR FORMING A SEMICONDUCTING PORTION BY EPITAXIAL GROWTH ON A STRAINED PORTION

摘要

The invention pertains to formation of a semiconducting portion (60) by epitaxial growth on a strained germination portion (40), comprising the steps in which a cavity (21) is produced under a structured part (11) by rendering free a support layer (30) situated facing the structured part (11), a central portion (40), termed the strained germination portion, then being strained; and a semiconducting portion (60) is formed by epitaxial growth on the strained germination portion (40), wherein the structured part (11) is furthermore placed in contact with the support layer (30) in such a way as to bind the structured part (11) of the support layer.

主权项

1. A method for forming a semiconducting portion (60) by epitaxial growth on a strained germination portion (40), comprising the steps of:
i) providing a stack, formed of a germination layer (10) covering a sacrificial layer (20) disposed on a support layer (30), said germination layer (10) exhibiting a non-zero initial value of tensile strain; ii) structuring the germination layer (10) in such a way as to form a structured part (11) and a peripheral part (12), the structured part (11) comprising a central portion (40) linked to the peripheral part (12) by at least two lateral portions (50) opposite one another in relation to the central portion (40), the lateral portions (50) exhibiting a greater average width than an average width of the central portion (40); iii) producing a cavity (21) under the structured part (11) while rendering free a surface (31) of the support layer (30) situated facing the structured part (11), the central portion (40), termed the strained germination portion, then being strained under tension to a final value greater than the initial value; iv) forming the semiconducting portion (60) by epitaxial growth on the strained germination portion (40); in which, during step iii), the structured part (11) is furthermore placed in contact with said free surface (31) in such a way as to bind the structured part (11) of said free surface (31).