| 发明名称 |
PHOTORESIST COMPOSITIONS AND METHODS |
| 摘要 |
New photoresists are provided that are useful in a variety of applications, including negative-tone development processes. Preferred resists comprise a first polymer comprising first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition. |
| 申请公布号 |
US2017090283(A1) |
申请公布日期 |
2017.03.30 |
| 申请号 |
US201615281492 |
申请日期 |
2016.09.30 |
| 申请人 |
Rohm and Haas Electronic Materials Korea Ltd. |
发明人 |
Jang Min-Kyung;Ryu Eui-Hyun;Hong Chang-Young;Kim Dong-Yong |
| 分类号 |
G03F7/004;G03F7/16;G03F7/20;C07D211/48;G03F7/40;C08F220/36;C07C271/12;G03F7/038;G03F7/32 |
主分类号 |
G03F7/004 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A photoresist composition comprising:
(a) a first polymer comprising: first units comprising a reactive nitrogen-containing moiety spaced from the polymer backbone, wherein the nitrogen-containing moiety produces a basic cleavage product during lithographic processing of the photoresist composition; and (b) one or more acid generators. |
| 地址 |
Cheonan KR |
