发明名称 INTEGRATED CIRCUIT AND METHOD THAT UTILIZE A SHAPE MEMORY MATERIAL
摘要 An integrated circuit that includes a substrate having a shape memory material (SMM), the SMM is in a first deformed state and has a first crystallography structure and a first configuration, the SMM is able to be deformed from a first configuration to a second configuration, the SMM changes to a second crystallography structure and deforms back to the first configuration upon receiving energy, the SMM returns to the first crystallography structure upon receiving a different amount of energy; and an electronic component attached to substrate. In other forms, the SMM is in a first deformed state and has a first polymeric conformation and a first configuration, the SMM changes from a first polymeric conformation to a second polymeric conformation and be deformed from a first configuration to a second configuration, the SMM changes returns to the first polymeric conformation and deforms back to the first configuration upon receiving energy.
申请公布号 WO2017052931(A1) 申请公布日期 2017.03.30
申请号 WO2016US48466 申请日期 2016.08.24
申请人 INTEL CORPORATION 发明人 QIU, Shipeng;LIFF, Shawna;HELMS, Kayleen L.;HEPPNER, Joshua D.;ELSHERVINI, Adel A.;SWAN, Johanna M.;BARNES, Gary M.
分类号 H01L23/498;H01L21/48 主分类号 H01L23/498
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