发明名称 |
INTEGRATED CIRCUIT AND METHOD THAT UTILIZE A SHAPE MEMORY MATERIAL |
摘要 |
An integrated circuit that includes a substrate having a shape memory material (SMM), the SMM is in a first deformed state and has a first crystallography structure and a first configuration, the SMM is able to be deformed from a first configuration to a second configuration, the SMM changes to a second crystallography structure and deforms back to the first configuration upon receiving energy, the SMM returns to the first crystallography structure upon receiving a different amount of energy; and an electronic component attached to substrate. In other forms, the SMM is in a first deformed state and has a first polymeric conformation and a first configuration, the SMM changes from a first polymeric conformation to a second polymeric conformation and be deformed from a first configuration to a second configuration, the SMM changes returns to the first polymeric conformation and deforms back to the first configuration upon receiving energy. |
申请公布号 |
WO2017052931(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
WO2016US48466 |
申请日期 |
2016.08.24 |
申请人 |
INTEL CORPORATION |
发明人 |
QIU, Shipeng;LIFF, Shawna;HELMS, Kayleen L.;HEPPNER, Joshua D.;ELSHERVINI, Adel A.;SWAN, Johanna M.;BARNES, Gary M. |
分类号 |
H01L23/498;H01L21/48 |
主分类号 |
H01L23/498 |
代理机构 |
|
代理人 |
|
主权项 |
|
地址 |
|