LONG CHANNEL MOS TRANSISTORS FOR LOW LEAKAGE APPLICATIONS ON A SHORT CHANNEL CMOS CHIP
摘要
Embodiments of the invention include vertically oriented long channel transistors and methods of forming such transistors. In one embodiment, a method of forming such a transistor may include forming a fin on a semiconductor substrate. Embodiments may also include forming a spacer over an upper portion of the fin and a lower portion of the fin not covered by the spacer may be exposed. Embodiments may also include forming a gate dielectric layer over the exposed portion of the fin. A gate electrode may then be deposited, according to an embodiment. Embodiments may include exposing a top portion of the fin and forming a first source/drain (S/D) region in the top portion of the fin. The second S/D region may be formed by removing the semiconductor substrate to expose a bottom portion of the fin and forming the second S/D region in the bottom portion of the fin.
申请公布号
WO2017052650(A1)
申请公布日期
2017.03.30
申请号
WO2015US52465
申请日期
2015.09.25
申请人
INTEL CORPORATION;MEHANDRU, Rishabh;MORROW, Patrick;FISCHER, Paul B.;LILAK, Aaron D.;CEA, Stephen M.
发明人
MEHANDRU, Rishabh;MORROW, Patrick;FISCHER, Paul B.;LILAK, Aaron D.;CEA, Stephen M.