METHODS, APPARATUSES AND SYSTEMS FOR INTEGRATED CIRCUIT STRUCTURES WITH A REPLACEMENT INTER-LAYER DIELECTRIC (ILD)

摘要

Embodiments of the present disclosure describe techniques and configurations associated with an integrated circuit (IC) structure with a replacement inter-layer dielectric (ILD) layer disposed on a first ILD layer. A sacrificial layer may be formed on the first ILD layer. Trenches may be patterned and formed in the sacrificial layer such that the trenches are disposed on the first ILD layer. Vias may be patterned and formed in the first ILD layer below the trenches. After formation of the trenches, the sacrificial layer may be removed, and the replacement ILD layer (e.g., a second ILD layer) may be formed on the first ILD layer between the trenches. Other embodiments may be described and/or claimed.