发明名称 |
METHOD OF MANUFACTURING SEMICONDUCTOR DEVICE |
摘要 |
A method of manufacturing a semiconductor device includes providing a substrate having an insulating film and a plurality of conductive films on a surface; reducing the substrate by supplying a first reducing gas to the substrate so that at least one of a plurality of process conditions of the first reducing gas is controlled so that a product of a plurality of process conditions becomes a predetermined value, wherein the process conditions of the first reducing gas include a partial pressure of the first reducing gas in a region where the substrate exists and a time taken to supply the first reducing gas to the substrate corresponding to a temperature of the first reducing gas; and selectively forming a metal film on the plurality of the reduced conductive films by supplying a second reducing gas and a metal-containing gas to the substrate. |
申请公布号 |
US2017092535(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
US201615280239 |
申请日期 |
2016.09.29 |
申请人 |
HITACHI KOKUSAI ELECTRIC INC. |
发明人 |
KIMIHIKO Nakatani;HIROSHI Ashihara |
分类号 |
H01L21/768;H01L21/3213;H01L23/532;H01L21/285 |
主分类号 |
H01L21/768 |
代理机构 |
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代理人 |
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主权项 |
1. A method of manufacturing a semiconductor device, comprising:
providing a substrate having an insulating film and a plurality of conductive films on a surface thereof, wherein each of the plurality of conductive films has a different incubation time; reducing the plurality of the conductive films by supplying a first reducing gas to the substrate, wherein process conditions of the first reducing gas are controlled so that a difference in incubation time among the plurality of conductive films is 0.01% or more and 50% or less; and selectively forming a metal film on the plurality of the reduced conductive films by supplying a second reducing gas and a metal-containing gas to the substrate. |
地址 |
Tokyo JP |