发明名称 |
SEMICONDUCTOR-SUBSTRATE PROCESSING APPARATUS, METHOD OF STRIPPING A PHOTORESIST, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE |
摘要 |
Provided is a method of reducing resist residue on a semiconductor substrate surface in a step of performing resist stripping, by introducing ozone gas into a chemical solution. Circulation lines are arranged for a tank (12) for performing processing on the semiconductor substrate (1), and two circulation pumps (131, 132) and two filters (141, 142) are arranged on those circulation lines. Further, a gas introducing jig (34) configured to dissolve the ozone gas into the chemical solution is incorporated in those circulation lines. |
申请公布号 |
US2017092512(A1) |
申请公布日期 |
2017.03.30 |
申请号 |
US201615264124 |
申请日期 |
2016.09.13 |
申请人 |
SII Semiconductor Corporation |
发明人 |
TAMAKI Ichiro |
分类号 |
H01L21/67 |
主分类号 |
H01L21/67 |
代理机构 |
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代理人 |
|
主权项 |
1. A semiconductor-substrate processing apparatus configured to strip a photoresist on a semiconductor substrate, the semiconductor-substrate processing apparatus comprising:
a processing tank configured to hold a chemical solution; a first circulation path and a second circulation path, which are arranged in parallel to circulate the chemical solution inside the processing tank; and an ozone gas generating device configured to supply the processing tank with ozone gas. |
地址 |
Chiba-shi JP |