发明名称 SEMICONDUCTOR-SUBSTRATE PROCESSING APPARATUS, METHOD OF STRIPPING A PHOTORESIST, AND METHOD OF MANUFACTURING A SEMICONDUCTOR DEVICE
摘要 Provided is a method of reducing resist residue on a semiconductor substrate surface in a step of performing resist stripping, by introducing ozone gas into a chemical solution. Circulation lines are arranged for a tank (12) for performing processing on the semiconductor substrate (1), and two circulation pumps (131, 132) and two filters (141, 142) are arranged on those circulation lines. Further, a gas introducing jig (34) configured to dissolve the ozone gas into the chemical solution is incorporated in those circulation lines.
申请公布号 US2017092512(A1) 申请公布日期 2017.03.30
申请号 US201615264124 申请日期 2016.09.13
申请人 SII Semiconductor Corporation 发明人 TAMAKI Ichiro
分类号 H01L21/67 主分类号 H01L21/67
代理机构 代理人
主权项 1. A semiconductor-substrate processing apparatus configured to strip a photoresist on a semiconductor substrate, the semiconductor-substrate processing apparatus comprising: a processing tank configured to hold a chemical solution; a first circulation path and a second circulation path, which are arranged in parallel to circulate the chemical solution inside the processing tank; and an ozone gas generating device configured to supply the processing tank with ozone gas.
地址 Chiba-shi JP