| 发明名称 |
SEMICONDUCTOR DEVICE AND METHOD FOR FORMING THE SAME |
| 摘要 |
Semiconductor devices and a method for forming the same are provided. In various embodiments, a method for forming a semiconductor device includes receiving a semiconductor substrate including a channel. An atmosphere-modulation layer is formed over the channel. An annealing process is performed to form an interfacial layer between the channel and the atmosphere-modulation layer. |
| 申请公布号 |
US2017092491(A1) |
申请公布日期 |
2017.03.30 |
| 申请号 |
US201514871871 |
申请日期 |
2015.09.30 |
| 申请人 |
TAIWAN SEMICONDUCTOR MANUFACTURING CO., LTD. |
发明人 |
CHEN Chun-Heng;CHANG Hui-Cheng;LUAN Hong-Fa;YU Xiong-Fei;HSU Chia-Wei |
| 分类号 |
H01L21/02;H01L29/78;H01L23/00;H01L29/66 |
主分类号 |
H01L21/02 |
| 代理机构 |
|
代理人 |
|
| 主权项 |
1. A method for forming a semiconductor device, the method comprising:
receiving a semiconductor substrate comprising a channel; forming an atmosphere-modulation layer over the channel, wherein the atmosphere-modulation layer is made of a material selected from the group consisting of metal nitride, oxynitride, and a combination thereof; and performing an annealing process to form an interfacial layer between the channel and the atmosphere-modulation layer at a pressure of about 10 atm to about 70 atm. |
| 地址 |
Hsinchu TW |
