METHOD FOR FORMING TiON FILM

摘要

A TiON film forming method is provided. A cycle of forming a unit TiN film at a predetermined processing temperature by alternately supplying a Ti-containing gas and a nitriding gas into the processing chamber accommodating a target substrate and oxidizing the unit TiN film by supplying an oxidizing agent into the processing chamber is repeated multiple times. In an initial stage of the film formation, a cycle of repeating the alternate supply of the Ti-containing gas and the nitriding gas X1 times and supplying the oxidizing agent is repeated Y1 times. In a later stage of the film formation, a cycle of repeating the alternate supply of the Ti-containing gas and the nitriding gas X2 times and supplying the oxidizing agent is repeated Y2 times until a desired film thickness is obtained. The number of repetition X1 is set to be greater than the number of repetition X2.

主权项

1. A TiON film forming method comprising:
accommodating a target substrate in a processing chamber; maintaining an inside of the processing chamber in a depressurized state; and repeating multiple times a cycle of forming a unit TiN film at a predetermined processing temperature by alternately supplying a Ti-containing gas and a nitriding gas into the processing chamber and oxidizing the unit TiN film by supplying an oxidizing agent into the processing chamber, wherein in an initial stage of the film formation, a cycle of supplying the oxidizing agent after repeating the alternate supply of the Ti-containing gas and the nitriding gas X1 times is repeated Y1 times, wherein in a later stage of the film formation, a cycle of supplying the oxidizing agent after repeating the alternate supply of the Ti-containing gas and the nitriding gas X2 times is repeated Y2 times until a desired film thickness is obtained, and wherein the number of repetition X1 in the initial stage of the film formation is set to be greater than the number of repetition X2 in the later stage of the film formation.