发明名称 DESTRUCTIVE READS FROM SPIN TRANSFER TORQUE MEMORY UNDER READ-WRITE CONDITIONS
摘要 Systems, apparatuses and methods may provide for detecting a read-write condition in which a read operation from a location in magnetoresistive memory such as spin transfer torque (STT) memory is to be followed by a write operation to the location. Additionally, a current level associated with the read operation may be increased, wherein the read operation is conducted from the location at the increased current level. In one example, the increased current level causes a reset of all bits in the location.
申请公布号 US2017092346(A1) 申请公布日期 2017.03.30
申请号 US201514864564 申请日期 2015.09.24
申请人 Intel Corporation 发明人 Naeimi Helia A.
分类号 G11C11/16 主分类号 G11C11/16
代理机构 代理人
主权项 1. A system comprising: a magnetoresistive memory; a bus coupled to the magnetoresistive memory; and a memory controller apparatus coupled to the bus, the memory controller apparatus comprising: a state monitor to detect a read-write condition in which a read operation from a location in the magnetoresistive memory is to be followed by a write operation to the location, wherein the state monitor includes: a writeback component to detect a pending writeback with respect to first data associated with the read operation, wherein the first data is to be previously modified data; anda cache miss component to detect a cache miss with respect to second data associated with the write operation,a current manager to increase a current level associated with the read operation,a read manager to conduct the read operation from the location at the increased current level,a comparator to identify one or more bits associated with the write operation that differ from corresponding bits in the location after the read operation, anda write manager to conduct the write operation only with respect to the identified one or more bits.
地址 Santa Clara CA US