发明名称 WAFER-LEVEL MANUFACTURE OF DEVICES, IN PARTICULAR OF OPTICAL DEVICES
摘要 The wafer-level method for applying N≧2 first elements to a first side of a substrate, wherein the substrate has at the first side a first surface including the steps of providing the substrate, wherein at least N barrier members are present at the first side, and wherein each barrier member is associated with one of the first elements. For each of the first elements, the method includes bringing a first amount of a hardenable material in a flowable state in contact with the first surface, the first amount of hardenable material being associated with the first element; controlling a flow of the first amount of hardenable material on the first surface with the associated barrier member; and hardening the first amount of hardenable material to interconnect the first surface and the respective element.
申请公布号 US2017087784(A1) 申请公布日期 2017.03.30
申请号 US201515310838 申请日期 2015.05.14
申请人 HEPTAGON MICRO OPTICS PTE LTD. 发明人 Bietsch Alexander;Barge Michel
分类号 B29D11/00;B29C59/16;G02B13/00;B29C65/48;G03F7/20;B29C59/02;B05D3/12 主分类号 B29D11/00
代理机构 代理人
主权项 1. A wafer-level method for applying N≧2 first elements to a first side of a substrate, the substrate providing at the first side a first surface, the method comprising a) providing the substrate, wherein at least N barrier members are present at the first side, and wherein each of the N barrier members is associated with one of the N first elements;the method comprising for each of the N first elements b) bringing a respective first amount of a hardenable material in a flowable state in contact with the first surface, the respective first amount of hardenable material being associated with the respective first element; c) controlling a flow of the respective associated first amount of hardenable material on the first surface by means of the respective associated barrier member; d) hardening the respective associated first amount of hardenable material;wherein for each of the N first elements, in step d), an interconnection between the first surface and the respective first element is created.
地址 Singapore SG